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研究了活性屏离子渗氮技术中,气体成分、主电压、温度、压强以及笼子尺寸对偏压伏安特性曲线的影响,并用气体放电理论对曲线做出了解释。实验结果表明,在H2或N2/H2气氛中,偏压的伏安特性曲线呈线性增长;而在纯N2气氛中,偏压的伏安特性曲线则呈非线性,并在250 V时出现拐点。研究还发现,在偏压一定的情况下,偏流会随着主电压和气压的升高而增大,随着温度的升高而减小,而笼子尺寸对偏压的伏安特性曲线的影响比较小。
The effects of gas composition, main voltage, temperature, pressure and cage size on the biased voltammetry curves were studied. The gas discharge theory was used to explain the curves. The experimental results show that the volt-ampere characteristic curve of the bias voltage increases linearly in the H2 or N2 / H2 atmosphere, while the volt-ampere characteristic curve of the bias voltage is nonlinear in the pure N2 gas atmosphere with an inflection point at 250 V . The study also found that with a certain bias voltage, the bias current will increase with the increase of the main voltage and pressure, and decrease with the increase of the temperature. The influence of the cage size on the volt-ampere characteristic curve of the bias voltage smaller.