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In this work,Bi2Te3 films(250 nm) are fabricated on Si O2/Si substrates by radio frequency(RF) magnetron sputtering at room temperature,and the prepared films are annealed over the temperature range of 200 °C to 400 °C.Crystallinity and electrical properties of the films can be tuned correspondingly.The power factors of Bi2Te3 films of 0.85 μW/K2 cm to 11.43 μW/K2 cm were achieved after annealing.The infrared reflectance measurements from 2.5 μm to 5.0 μm demonstrate that there is also a slight red-shift of the plasma oscillation frequency in the Bi2Te3 films.By means of plasmonic calculations,we attribute the red-shift of absorption peaks to the reduction of carrier concentration and the change of effective mass of Bi2Te3 films with the increased annealing temperature.
In this work, Bi2Te3 films (250 nm) are fabricated on Si O2 / Si substrates by radio frequency (RF) magnetron sputtering at room temperature, and the prepared films are annealed over the temperature range of 200 ° C to 400 ° C. Crystinityinity and electrical properties of the films can be tuned correspondingly. The power factors of Bi2Te3 films of 0.85 μW / K2 cm to 11.43 μW / K2 cm were achieved after annealing. infrared reflectance measurements from 2.5 μm to 5.0 μm demonstrate that there is also a slight red-shift of the plasma oscillation frequency in the Bi2Te3 films. By means of plasmonic calculations, we attribute the red-shift of absorption peaks to the reduction of carrier concentration and the change of effective mass of Bi2Te3 films with the increased annealing temperature.