采用NH3气氛处理直流/射频共溅射方法制得的ZnO:Al薄膜,从而获得Al+N共掺p型ZnO薄膜.XRD,场发射扫描电子显微镜测试及Hall效应测试发现,处理温度对ZnO薄膜的结构和电学性能具有较大的影响,其中处理温度为700℃时,薄膜具有较好的c轴择优取向,并且薄膜表面平整,结构紧密,晶粒大小均匀,无明显空洞和裂缝,具有良好的表面质量,晶粒尺寸约为40—60nm,薄膜的导电类型由n型转变为p型. ZnO / Al films prepared by DC / RF co-sputtering were treated with NH3 atmosphere to obtain Al + N co-doped p-type ZnO thin films.XRD, field emission scanning electron microscopy and Hall effect tests showed that the processing temperature of ZnO thin films The structure and electrical properties of the film have a greater impact. The film has good c-axis preferred orientation at 700 ℃, and the film surface is smooth, the structure is compact, the crystal size is uniform, there are no obvious voids and cracks, and the film has good properties The surface quality of the grain size of about 40-60nm, the conductivity type of the film from n-type to p-type.