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本文研究了掺Cr半绝缘GaAs材料的Be离子注入.结果表明,在600—700℃下用无包封退火技术,可以得到高的激活率.近于理想的高斯分布和较高的迁移率.
In this paper, the Be ion implantation of Cr-doped semi-insulating GaAs material has been studied.The results show that the high activation rate can be obtained by annealing without annealing at 600-700 ℃, which is close to the ideal Gaussian distribution and high mobility.