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本文较为详细地分析了SOIMOSFET的失真行为 .利用幂级数方法对不同结构包括部分耗尽PD、全耗尽FD和体接触BC的SOI器件的谐波失真进行了对比性的实验研究 .同时 ,在实验分析的基础上提出了描述失真行为的连续的SOIMOSFET失真模型 .该模型通过引入平滑函数和主要的影响失真的物理机制 ,使得模拟计算结果能够与实验结果较好的吻合 .本文所得到的结果可用于低失真的数模混合电路的设计 ,并对低失真电路的优化提供指导方向 .
In this paper, the distortion behavior of SOIMOSFETs is analyzed in detail.The harmonic distortion of SOI devices with different structures, including partially depleted PD, fully depleted FD, and body-to-contact BC, is studied by power series method.Meanwhile, Based on the experimental analysis, a continuous SOIMOSFET distortion model describing the distortion behavior is proposed. By introducing the smoothing function and the main physical mechanisms that affect the distortion, the simulation results are in good agreement with the experimental results. The result can be used in the design of low-distortion digital-analog hybrid circuits and provides guidance for the optimization of low-distortion circuits.