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本工作通过采用电化学极 -化学氧化两步法在 1:1氢氟酸和乙醇溶液中制备出孔径约为 1～ 2 μm ,厚度大经为 6～ 10 μm的多孔硅样品 .首先将 0 .0 3A/cm2 的恒电流施加到p( 10 0 )硅片一段时间 ,然后将该硅片浸到 2 0 %的硝酸溶液中氧化一段时间 .通过此方法获得的多孔硅结构再进一步用扫描电子显微镜和拉曼光谱仪进行表面形貌和光学性质的考察 .所有制备出的多孔硅结构均有光致发光现象 .老化的多孔硅样品 (在干燥器放置一年 )的光致发光谱峰强度明显增强 ,但分别经过苯乙烯和十六碳烯 ( 1)两种有机溶剂处理 1h后的老化多孔硅样品的光致发光强度却没有显著改变 .
In this work, a porous silicon sample with a pore size of 1 ~ 2 μm and a thickness of 6 ~ 10 μm was prepared in a 1: 1 hydrofluoric acid and ethanol solution by using a two-step electrochemical polarization-chemical oxidation process. Firstly, 0 .0 3A / cm2 of constant current is applied to the p (10 0) silicon wafer for a period of time, and then the wafer is immersed in 20% nitric acid solution for a period of oxidation. The porous silicon structure obtained by this method is further scanned Electron microscopy and Raman spectroscopy were used to investigate the surface topography and optical properties of all porous silicon structures.Photoluminescence was observed in all prepared porous silicon structures.The photoluminescence peak intensity of aged porous silicon samples (placed in the desiccator for one year) However, the photoluminescence intensity of the aged porous silicon samples treated with two organic solvents, styrene and hexadecene (1), respectively, did not change significantly.