论文部分内容阅读
给出了几种 Ga As MESFET单片混频器结构与芯片测试结果比较。实验表明 ,在相同本振功率激励下 Ga As MMIC双栅混频器具有良好变频特性 ,栅混频器指标次之 ,漏混频器结构最简单 ,但变频特性不如前两种。另外 ,单片巴仑双平衡混频器具有高的动态范围和宽频段工作特点。
Several Ga As MESFET monolithic mixer structures and chip test results are compared. Experiments show that the Ga As MMIC double-gate mixer has good frequency conversion characteristics under the same LO power excitation, followed by the gate mixer. The leakage mixer structure is the simplest, but the frequency conversion characteristics are not as good as the first two. In addition, a single balun double balanced mixer with high dynamic range and wideband operating characteristics.