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日本超大规模集成电路技术研究组合共同研究所最近研究了可能实现亚微米图形的高速电子束扫描装置与电子束掩模制造装置,并研究了在实现1兆位存贮器中能发挥作用的新结构“SHC RAM”(迭式高电容随机存取存贮器),其中关于“SNC RAM”在2月份召开的美国国际固体电路会议上已发表。上述的电子束扫描装置是在该所1978年研制的光栅扫描方式基础上改进而成的,采用绕过没有图形的部分进行扫描的可变成形束方式,这样扫描速度就大大提高了。用过去的方式扫描100毫米见方的片子和掩模需要180分钟,而用该方式12分钟就可完成,而且由于电子束系统采用可变束方式,能进行最小线宽0.5微米(束斑0.125微米)的描画,
Japan's VLSI Technology Research Co-Institute has recently studied high-speed electron beam scanning devices and electron beam mask manufacturing devices that may realize submicron patterns and has studied novel devices that can play a role in achieving 1 megabyte of memory Structure, “SHC RAM” (stacked high capacitance random access memory), of which “SNC RAM” has been published at the American International Solid State Circuits Conference in February. The above-mentioned electron beam scanning device was developed based on the rasterization method developed in 1978. The variable beam forming method uses a variable beam method to scan around a part without any pattern, so that the scanning speed is greatly improved. It takes 180 minutes to scan 100mm square films and masks in the past, and 12 minutes in this way, and since the electron beam system uses a variable beam method, a minimum line width of 0.5 microns (beam spot of 0.125 microns ) Of the drawing,