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本文对S波段盒形窗内TE11模和TM11模两个模式存在下的次级电子倍增效应进行了分析,证明了TM11的存在会影响盒形窗次级电子倍增的阈值,通过对比双面法向谐振倍增(法向电场激励)和单面切向倍增(切向电场激励)两种倍增方式,证明了TM11模法向场的存在改变了窗片表面次级电子倍增的轨迹,使次级电子倍增的电场阈值上限降低,且该现象是由倍增初期的窗片表面的双面谐振所致。
In this paper, the secondary electron multiplication effect in the presence of TE11 mode and TM11 mode in the S-band box-shaped window is analyzed. It is proved that the presence of TM11 affects the threshold of the secondary electron multiplication of the box-shaped window. The double multiplication modes of harmonic multiplication (normal electric field excitation) and single-face tangential electric double-field (tangential electric field excitation) prove that the presence of TM11 mode field changes the trajectory of secondary electron multiplication on the window surface, The upper limit of the electric field threshold of electron multiplication decreases, and this phenomenon is caused by the double-sided resonance of the window surface at the beginning of multiplication.