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利用高分辨率X射线衍射技术对分子束外延CdTe(211)B/Si(211)材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的对称衍射面和非对称衍射面的倒易空间图,对CdTe缓冲层的剪切应变状况进行了分析。研究发现,对于CdTe/Si结构,随着CdTe厚度的增加,[1-1-1]、[01-1]两个方向的剪切角[γ1-1-1]和[γ01-1]都有变小的趋势,且[γ1-1-1]的大小约为[γ01-1]的两倍;对于CdTe/ZnTe/Si结构,ZnTe缓冲层的引入可以有效地降低CdTe层的剪切应变。
The CdTe epitaxial films with molecular beam epitaxy of CdTe (211) B / Si (211) were scanned by reciprocal point using high resolution X-ray diffraction. The obtained symmetric and asymmetric diffraction surfaces Space diagram, the shear strain of CdTe buffer layer was analyzed. It is found that the shear angles [γ1-1-1] and [γ01-1] in [1-1-1] and [01-1] directions are both in the CdTe / Si structure with the increase of CdTe thickness And the size of [γ1-1-1] is about twice that of [γ01-1]. For the CdTe / ZnTe / Si structure, the introduction of the ZnTe buffer layer can effectively reduce the shear strain of the CdTe layer .