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对目前垂直纳米线晶体管的制备技术进行了综述。首先根据器件结构取向介绍了纳米线晶体管的分类,即水平纳米线晶体管和垂直纳米线晶体管,比较了这两类不同结构晶体管的优缺点,阐述了垂直纳米线晶体管的优势及其潜在应用价值。重点介绍了两种主流的垂直纳米线晶体管的制造方法,即自下而上方法和自上而下方法,自上而下方法则又分为后栅工艺和先栅工艺。随后详细比较了它们之间的不同。最后,对垂直纳米线晶体管制造过程中的工艺挑战进行了分析,提出了几种可行的解决方案,并预测了垂直纳米线晶体管未来的发展趋势,特别是在低功耗器件及3D存储器等方面的发展走向。
The preparation techniques of the current vertical nanowire transistors are reviewed. Firstly, the classification of nanowire transistors is introduced according to the structure orientation of the device, namely the horizontal nanowire transistor and the vertical nanowire transistor. The advantages and disadvantages of these two types of transistors are compared. The advantages and potential applications of the vertical nanowire transistor are described. The two mainstream manufacturing methods of vertical nanowire transistors are introduced emphatically, that is, the bottom-up method and the top-down method, and the top-down method is divided into the gate last gate process and the gate first gate process. Then compare the differences between them in detail. Finally, the process challenges in the fabrication of vertical nanowire transistors are analyzed, several feasible solutions are proposed and the future trends of vertical nanowire transistors are predicted, especially in low power devices and 3D memories The development trend.