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通过Ｘ光电子能谱（ＸＰＳ）、阳极氧化电压谱（ＡＶＳ）和Ｆｉｓｋｅ台阶电压的测量，研究了约瑟夫森结中ＡｌＯｘＡｌ隧道势垒．发现结的隧道势垒最佳沉积Ａｌ层厚度为７ｎｍ，Ａｌ上形成ＡｌＯｘ厚度只取决于氧化条件，与沉积Ａｌ厚无关，势垒Ａｌ氧化物可能含有一个像ＡｌＯＯＨ态的ＯＨ基团．同时，估算了剩余Ａｌ厚度，证实了结中Ａｌ／Ｎｂ间在４２Ｋ时，由常态Ａｌ而产生临近效应的存在
The X-ray photoelectron spectroscopy (XPS), anodic oxidation voltage spectrum (AVS) and Fiske step voltage measurements were used to study the AlOxAl tunnel barrier in the Josephson junction. It is found that the optimum deposited Al layer thickness of junction tunnel barrier is 7 nm. The thickness of AlOx formed on Al depends only on the oxidation conditions. Al barrier layer Al oxide may contain an OH group like AlOOH regardless of the thickness of Al deposited. At the same time, the remaining Al thickness was estimated, confirming the existence of the proximity effect caused by normal Al at 4 2K between the Al / Nb junctions