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介绍了一个200kHz信号带宽、用于低中频结构GSM射频接收机的高精度ΣΔ调制器.该调制器采用3阶单环单比特的结构,电路使用全差分开关电容结构实现,并在0.6μm2P2 M CMOS工艺下流片验证.调制器使用全差分±1 V参考电压,工作在26 MHz采样频率,过采样率为64 .测试结果表明,在200kHz信号带宽内,调制器达到80.6dB动态范围,峰值SNDR达到71.8dB,峰值SNR达到73.9dB.整个调制器电源电压为5 V,静态功耗为15 mW.
This paper introduces a high-precision ΣΔ modulator with a 200kHz signal bandwidth and a low-intermediate frequency GSM RF receiver. The modulator adopts a 3-order single-loop single-bit architecture. The circuit uses a fully differential switched capacitor structure and is implemented in 0.6μm2P2 M CMOS process. The modulator uses a fully differential ± 1 V reference voltage and operates at a 26 MHz sampling frequency with an oversampling ratio of 64. The test results show that the modulator achieves a dynamic range of 80.6 dB over a 200 kHz signal bandwidth with a peak SNDR Reaching 71.8dB with a peak SNR of 73.9dB. The entire modulator supply voltage is 5 V and the quiescent power dissipation is 15 mW.