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本文所述的功率 FET 与以前小信号用的 FET 不同,是一个电流垂直于半导体基片流动的纵向结构器件。其主要优点有:(1)脉冲响应特性好。(2)可以获得 n 型沟道,p 型沟道的互补器件。(3)夹断特性好。(4)输出阻抗低,输入阻抗高。(5)是电压控制器件。笔者所发明的纵形 FET(V 形 FET)是采用选择氧化这一独特的结构做成的。图1示出了 n 型沟道的结构剖面图。这里栅极区域与源电极是用厚的氧化膜分隔开的,因
The power FET described here, unlike previous small-signal FETs, is a vertical structure device with current flowing perpendicular to the semiconductor substrate. Its main advantages are: (1) good impulse response. (2) You can obtain n-channel, p-channel complementary devices. (3) good clip-off characteristics. (4) low output impedance, high input impedance. (5) is a voltage control device. The vertical FET (V-FET) invented by the author is made of the unique structure of selective oxidation. Fig. 1 shows a cross-sectional view of the structure of an n-type channel. Here, the gate region and the source electrode are separated by a thick oxide film