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本文研究了固定漏电压、栅脉冲ＡＣ应力条件下ｎＭＯＳＦＥＴ’ｓ器件特性的退化情况．不同高低电平栅脉冲的应力实验结果表明，ＡＣ热载流子应力条件下器件特性的退化与栅脉冲高低电平的覆盖的范围密切相关．ＡＣ应力条件下器件退化是否增强，取决于ＡＣ应力过程是否经历了不同模式的ＤＣ应力．
In this paper, the degradation of nMOSFET’s device characteristics under constant leakage voltage and gate pulse AC stress is studied. The results of stress experiments with different high and low level gate pulses show that the degradation of device characteristics under AC hot carrier stress is closely related to the coverage of high and low gate pulses. Decreasing device degradation under AC stress depends on whether the AC stress process experiences different modes of DC stress.