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本文主要探讨砷化镓薄层外延硫掺杂量的控制问题。讨论了掺杂混合溶液S_2Cl_2/AsCl_3中,S_2Cl_2含量逐渐减少的原因。在科研实践的基础上,将复杂的薄层外延硫掺杂行为,简化为掺杂流量V=CF的线性公式,其中F=As/S×10~(-4),C为反应系数。讨论了F值的大小问题,认为:F=2～5的掺杂混合溶液较为适用。进一步建立了V_2=KU_1V_1,根据上一炉外延片的击穿电压U_1与掺杂流量V_1来调整下一炉掺杂流量V_2的公式。运用这两个公式为我们科研实践服务,对稳定科研工艺是有一定的效果的。
This article mainly discusses the control of GaAs thin-layer epitaxial sulfur doping. The reasons for the gradual decrease of S 2 Cl 2 content in the mixed solution S_2Cl_2 / AsCl_3 were discussed. On the basis of scientific research, the complex thin-layer epitaxial sulfur doping behavior is simplified to a linear formula of doping flux V = CF, where F = As / S × 10 ~ (-4) and C is the reaction coefficient. The size of F value is discussed. It is considered that the mixed solution with F = 2 ~ 5 is more suitable. The formula of V_2 = KU_1V_1 is further established to adjust the doping flow rate V_2 of the next furnace according to the breakdown voltage U_1 and the doping flow rate V_1 of the epitaxial wafer of the previous furnace. The use of these two formulas for our scientific research and practice services, the stability of scientific research process has a certain effect.