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硒化镉晶体是一种很有前途的室温核辐射探测器半导体材料,实验采用改进的双温区气相垂直提拉法成功的生长了(?)15mm×40mm,电阻率为10~7～10~8(Ω·cm)量级的硒化镉单晶体。对生长的硒化镉单晶体(110)解理晶片进行XRD、红外透过测试,结果显示：硒化镉单晶体完整性好,红外透过率＞62%,表明用二步提纯,在具有较好温度梯度的双温区炉中生长晶体,能有效地控制杂质、缺陷浓度和晶体的化学配比。
CdSe crystal is a promising semiconductor material at room temperature nuclear radiation detector. The experiment has been successfully carried out by adopting an improved double-zone gas-phase vertical pulling method (?) 15mm × 40mm and a resistivity of 10 ~ 7 ~ 10 ~ 8 (Ω · cm) order cadmium selenide single crystal. The results show that the single crystal of cadmium selenide (110) has good integrity and infrared transmittance of> 62%, which shows that it is better to use two-step purification. Temperature gradient in the dual temperature zone furnace crystal growth, can effectively control the impurities, the concentration of defects and the crystal chemical ratio.