双栅场效应管是近年来提出的一种新颖场效应管器件。本文以双栅场效应管(DG-FET)为研究对象,根据双栅场效应管的亚导通态特性分析,进行二值-三值编码电路的设计。设计实例表明,与传统设计方法相比,利用双栅场效应管亚导通态进行二值-三值编码电路设计具有明显的优势,从而为推进三值逻辑电路的实用化提供途径。 Double-gate FET is proposed in recent years, a novel FET devices. In this paper, the dual-gate FET (DG-FET) is taken as the research object. According to the analysis of the sub-conduction state characteristics of the dual-gate FET, the design of binary-ternary coding circuit is carried out. The design example shows that compared with the traditional design method, the design of binary-ternary coding circuit using dual-gate FET sub-conduction state has obvious advantages, which can provide a practical way to promote the practical application of three-valued logic circuit.