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氮化硅淀积技术的新进展,导致金属-氮化物-氧化物-硅(MNOS)集成电路工艺的出现,成为现有MOS工艺的另一选择和补充方案。有人提出将MNOS场效应晶体管用于逻辑电路(取代MOS晶体管)和永久性(nonvolatile)的存贮阵列。本文评论MNOS晶体管的特性和应用。提出一种统一的方法来表征稳定的接通电压MNOS晶体管和可变的接通电压MNOS晶体管。本文以MNOS结构中电荷输运和存贮的研究为基础。利用两层介质结构的物理参数描述和分析晶体管的不同工作方式。对晶体管工作的物理机构的分析应适用于晶体管结构的最佳化和各种数字集成电路应用的性能。制作了永久性半导体存贮阵列和永久性触发器证明了这些应用的可能性。
The new development of silicon nitride deposition technology has led to the advent of MNOS integrated circuit technology, which has become another alternative and supplement to the existing MOS technology. It has been proposed to use MNOS field-effect transistors for logic circuits (instead of MOS transistors) and nonvolatile memory arrays. This article reviews the features and applications of MNOS transistors. A uniform approach is proposed to characterize a stable on-voltage MNOS transistor and a variable on-voltage MNOS transistor. This paper is based on the study of charge transport and storage in MNOS structures. The physical parameters of the two-layer dielectric structure are used to describe and analyze the different working modes of the transistor. Analysis of the physical mechanism of transistor operation should be applied to the optimization of the transistor structure and the performance of various digital integrated circuit applications. The production of permanent semiconductor memory arrays and permanent flip-flops proves the potential of these applications.