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本文采用三角阱近似，计算了ＧａＡｓ／ＡｌＧａＡｓ二维电子气（２ＤＥＧ）电子只占据基态子带时，由极性光学声子、声学形变势、声学压电势、远程电离杂质、本底电离杂质、合金无序以及界面粗糙等七种主要的散射机制决定的电子迁移率与温度、２ＤＥＧ浓度、本底电离杂质沈度、以及界面不平整度等的关系．理论计算结果与实验符合很好．就作者所知考虑上述七种散射机制计算２ＤＥＧ电子迁移率的工作，以前未见报道．
In this paper, the triangular-well approximation is used to calculate the dipole moment of GaAs / AlGaAs 2DEG electrons which occupy only the ground state sub-band. The calculated results are obtained from polar optical phonons, acoustic deformation potentials, acoustic piezoelectric potentials, remote ionization impurities, background ionization impurities , Alloy disordering and interface roughness of the seven main scattering mechanisms determine the electron mobility and temperature, 2DEG concentration, background ionization impurity concentration, as well as interface roughness and so on. The theoretical calculation is in good agreement with the experiment. The authors’ work of calculating the 2DEG electron mobility considering the above seven scattering mechanisms has not been reported before.