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前言在绝缘体上集成电路不仅具有众所周知的开关时间短的优点,而且也具有高的密度,因为不同的元件,如象互补的晶体管及二极管可以集成在同一衬底上而不需要附加任何的绝缘措施,并且由于在相邻元件中间利用腐蚀的方法使元件之间的硅薄膜剥离,以避免元件之间的寄生效应。以高的存储密度为例,将讨论在绝缘体外延硅薄膜(ESFI)~1上已经实现了的新的静态MOS存储单元。另外还将描述在小规模和大规模集成矩阵中它们的静态和动态特性。这些存储单元与动态存储单元[1]在密度上是可比拟的,而由于该单元不需要再生,所以这一特点比它们优越。
INTRODUCTION Integrated circuits on insulators have the advantage of not only short switching times but also high densities because different components such as complementary transistors and diodes can be integrated on the same substrate without the need for any additional insulation measures , And the silicon film between the elements is peeled off by using etching method in the middle of adjacent elements to avoid the parasitic effect between the elements. Taking high memory density as an example, a new static MOS memory cell that has been implemented on an insulator epitaxial silicon film (ESFI) ~ 1 will be discussed. It will also describe their static and dynamic behavior in small-scale and large-scale integration matrices. These memory cells are comparable in density to the dynamic memory cells [1], which is superior to them because they do not require regeneration.