本文采用求光场方程、载流子扩散方程、热导方程以及泊松方程自洽解的方法，研究了垂直腔面发射半导体激光器的电、热和光波导特性．计算结果表明，出射窗口半径和限制区的深度、厚度以及半径是影响其注入电流和电压分布的主要因素．在不同的深度，电流和电压的分布是不同的．因而电流的分布不是一个固定的模式．对于较大出射窗口的垂直腔面发射半导体激光器，有源区的电流密度分布不均匀是引起高阶横模的主要原因．限制区的位置对有源区中电流的扩展有很大的影响 In this paper, the electric, thermal and optical waveguide characteristics of a vertical cavity surface-emitting semiconductor laser are studied by using the light field equation, the carrier diffusion equation, the thermal conductivity equation and the self-consistent solution of the Poisson equation. The calculation results show that the radius of the exit window and the depth, thickness and radius of the confinement area are the main factors affecting the current and voltage distribution. At different depths, the current and voltage distributions are different. Thus the current distribution is not a fixed pattern. For vertical cavity surface emitting semiconductor lasers with large exit windows, the uneven distribution of current density in the active region is the main cause of the high-order transverse modes. The location of the confinement area has a great influence on the current expansion in the active area