论文部分内容阅读
,Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network
【机 构】
：
Key Laboratory of Radio-Frequency Circuit and System, Hangzhou Dianzi University, Hangzhou 310018, C
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2011年3期
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