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GaSb-based 2.4 μm InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated.The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1％ compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer.The output power of the laser with a 50-μm-wide 1-mm-long cavity is 28mW,and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.