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在阳极短路型门极可关断晶闸管(SA-GTO)的基础上,提出了一种新颖的注入效率可控的门极可关断晶闸管(IEC-GTO),其注入效率可通过一层位于阳极短路接触区的薄氧化层来控制.模拟了IEC-GTO的正向阻断、导通和开关特性,并与短路阳极和普通阳极GTO的特性进行比较分析.结果表明,IEC-GTO在关断特性和通态特性间获得较好的折中.最后,通过对薄阳极氧化层宽度和阳极掺杂浓度的优化,分析了工艺的可行性,给出了工艺方案,说明引入氧化层并不会增加IEC-GTO的工艺难度.
Based on the anode shorted thyristor (SA-GTO), a novel gate-controlled thyristor (IEC-GTO) with controlled injection efficiency is proposed, Anode short-circuit contact area of the thin oxide layer to control the IEC-GTO positive blocking, conduction and switching characteristics, and short-circuited anode and common anode GTO characteristics were compared and analyzed.The results show that, IEC-GTO in the off Breaking characteristics and on-state characteristics of a good compromise between the.Finally, through the optimization of the anodic oxide width and anode doping concentration, the feasibility of the process is analyzed, the process scheme is given, indicating that the introduction of the oxide layer is not Will increase the difficulty of IEC-GTO process.