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在有效质量近似(EMA)下,采用B样条技术和变分方法,分别研究较大CdTe球量子点(2.5—35nm)和较小CdS球量子点(0.25—3.5nm)中激子的量子受限效应,计算出CdTe和CdS球量子点中受限激子的基态能和束缚能随参数的变化规律,比较两种计算结果得到(1)较大量子点中受限激子的基态能和束缚能对量子点边界和量子点外部介质的介电常数不敏感,但较小量子点中受限激子的基态能和束缚能对量子点边界和量子点外部介质的介电常数比较敏感.(2)在较强受限区域,大量子点与小量子点的激子基态能和束缚能的变化规律完全不同.(3)B样条技术对于研究这种具有边界的束缚态系统是很精确的方法,这种方法特别适合用于多层结构量子点系统的精确计算.
Under effective mass approximation (EMA), B-spline technique and variational method were used to study the quantum of excitons in larger CdTe quantum dots (2.5-35nm) and smaller CdS quantum dots (0.25-3.5nm) Constrained effect, we calculated the ground-state energy and bound energy of the excitons in the CdTe and CdS quantum dots. The results of the two calculations show that (1) the ground state energy of the confined excitons in larger quantum dots And the bound energy are not sensitive to the permittivity of the quantum dot boundary and the dielectric outside the quantum dot. However, the ground state energy and the binding energy of the confined exciton in the smaller quantum dot are sensitive to the dielectric constant of the boundary of the quantum dot and the external dielectric of the quantum dot . (2) In strongly confined regions, the laws of the ground state energy and binding energy of excitons of large quantum dots and small quantum dots are completely different. (3) B-spline technique is very important for studying this bound bound state system Very accurate method, this method is particularly suitable for accurate calculation of multilayer quantum dot system.