据《Semiconductor International》1988年5月号报道,位于牛津郡的卢瑟福阿普尔顿实验室(RAL)的一个工作小组,最近研制成一种准分子激光等离子体X射线源,并用该源在非净化室条件下进行接触式光刻,将线宽-间隙为0.5μm的光栅图形,复印在0.5μm厚的EBR-9型电子束抗蚀剂上,抗蚀剂线条侧壁非常陡峭。不足的是,目前片子曝光时间较长(25分钟)。 According to Semiconductor International’s May 1988 report, a working group at the Rutherford Appleton Laboratory (RAL) in Oxfordshire recently developed an excimer laser plasma X-ray source that uses this source in non- Contact photolithography was performed in a clean room. The grating pattern with a linewidth-gap of 0.5 μm was copied on a 0.5 μm-thick EBR-9 electron beam resist and the sidewalls of the resist lines were very steep. The downside is that the current film exposure longer (25 minutes).