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采用金属Ni作为掩膜,Cl2/BCl3作为刻蚀气体,利用感应耦合等离子体刻蚀(ICP)技术对Ga As HEMT背孔工艺进行研究。本文详细研究了ICP功率、反应室压强、Cl2/BCl3流量比以及RF功率对刻蚀速率、刻蚀形貌以及“长草”效应的影响。实验结果表明:刻蚀速率随ICP功率、Cl2/BCl3流量、RF功率的增加而增加,但随反应室压强的增加,刻蚀速率先增加后降低;相同RF功率条件下,背孔陡直性受ICP功率、反应室压强以及刻蚀气体流量比的影响十分明显;而RF功率则对背孔“长草”效应有较大影响。通过优化刻蚀条件,在ICP功率为500 W,反应室压强为0.4 Pa,Cl2/BCl3流量为20/5 m L/min,RF功率为120 W的刻蚀条件下,刻蚀背孔陡直性好,侧壁平滑,底部平整,刻蚀速率达到3μm/min。
Using Ni as mask and Cl2 / BCl3 as etching gas, the GaAs HEMT back-hole process was studied by inductively coupled plasma (ICP) technique. The effects of ICP power, chamber pressure, Cl2 / BCl3 flow ratio, and RF power on etch rate, etched morphology, and the “Long Grass” effect were examined in detail. The experimental results show that the etching rate increases with the increase of ICP power, Cl 2 / BCl 3 flow rate and RF power. However, with the increase of reaction chamber pressure, the etching rate first increases and then decreases. Under the same RF power conditions, The effect of ICP power, chamber pressure and etch gas flow ratio is significant, while RF power has a greater impact on the backhole “long grass” effect. By optimizing the etching conditions, under the etching condition of ICP power of 500 W, reaction chamber pressure of 0.4 Pa, Cl 2 / BCl 3 flow rate of 20/5 m L / min and RF power of 120 W, Good, smooth sidewall, the bottom of the flat, etching rate of 3μm / min.