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设计和制造了一种高效高功率的220 GHz倍频器,倍频器的有源器件是一只反向串联二极管芯片,它是由四个平面GaAs肖特基二极管通过线性阵列方式集成到一块芯片上。使用ADS和HFSS软件相结合的方法对220GHz倍频器的进行了仿真优化,首先利用HFSS三维电磁仿真准确建立二极管和波导的结构模型,再利用ADS线性和非线性谐波电路仿真来优化倍频电路的性能。在210~230 GHz的频带范围内,220 GHz倍频器在20 mW固定功率输入条件下测试,功率输出大于0.5 mW;在100 mW固定功率注入时,整个20 GHz频带范围内功率输出大于2.1 mW,在214 GHz处输出峰值功率5 mW,效率为5%。反向串联二极管单片上的二极管采用的是并联布局放置方式,这种方式将二极管产生的热量从二极管直接传导到波导腔体的金属导体壁上,利于散热。220 GHz倍频器的研制成功,证明了国产平面封装GaAs肖特基二极管的毫米波频段的应用能力,其研制方法对将来更高频率的电路设计具有借鉴意义。
An efficient and high power 220 GHz frequency doubler is designed and fabricated. The active part of the frequency multiplier is an inverted tandem diode chip. It is composed of four planar GaAs Schottky diodes integrated in a linear array Chip. The method of combining ADS and HFSS software was used to simulate and optimize the 220GHz frequency multiplier. Firstly, the structural model of diode and waveguide was established accurately by using HFSS three-dimensional electromagnetic simulation, and then the ADS linear and nonlinear harmonic circuit simulation was used to optimize the frequency doubler Circuit performance. The 220 GHz frequency multiplier is tested at 20 mW fixed power input over the frequency range 210-230 GHz with a power output greater than 0.5 mW; at 100 mW fixed power injection, the power output over the entire 20 GHz band is greater than 2.1 mW , Peak power of 5 mW at 214 GHz, efficiency of 5%. Inverted series diodes on a single diode is used in parallel layout of the place, in this way the heat generated by the diode diode conduction directly to the waveguide cavity metal conductor wall, which is conducive to heat dissipation. The successful development of the 220 GHz frequency multiplier proves the application ability of the millimeter-wave frequency band of domestic flat-package GaAs Schottky diodes. Its development method is of great significance to the design of higher frequency circuits in the future.