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In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR’s section thickness d, and insensitively dependent on TSQR’s section inner radius R 1 and TSQR’s inner radius R 2 . The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.
In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs / GaAs tire-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR’s section thickness d, and insensitively dependent on TSQR’s section inner radius R 1 and TSQR’s inner radius R 2. The model and results provide useful for design and fabrication of InAs / GaAs TSQRs.