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在１２０Ｋ至４７０Ｋ的温区内，测量了脉冲激光沉积ＹＢａ２ＣｕＯ７－ｘ薄膜的正电子寿命的温度依赖关系．实验结果表明，除块材中存在的正电子深捕获中心外，超导外延膜中还存在大量块材中缺乏的正电子浅捕获中心；低温下，深捕获中心所对应的缺陷有可能扩展成为有效的磁通钉扎中心．浅捕获中心对正电子的束缚能为２７ｍｅＶ．
The temperature dependence of the positron lifetime of pulsed laser deposited YBa2CuO7-x films was measured in the temperature range of 120K to 470K. The experimental results show that in addition to the positron-deep trapping center existing in the bulk material, there are still plenty of positron-shallow trapping centers absent from a large number of bulk materials in the superconducting epitaxial films. At low temperature, the defects corresponding to the deep trapping centers are likely to expand to Effective flux pinning center. Shallow capture center positron binding energy of 27meV.