以CH3SiCl3为源物质,H2为载气,Ar气为稀释气体,研究了沉积温度和沉积气氛压力对SiC沉积形貌的影响.应用晶体成核-长大理论和SiC沉积热力学理论,解释了SiC沉积的各种形貌.研究表明;降低系统压力和提高沉积温度,能减小SiC在气相中形核所需的最大能量,促进形核.SiC沉积热力学随沉积条件的改变决定了SiC沉积形貌的改变. The influence of deposition temperature and deposition pressure on the deposition morphology of SiC was investigated using CH3SiCl3 as the source material, H2 as the carrier gas, and Ar gas as the diluent gas. The effects of SiC deposition thermodynamics and the nucleation and growth theory of SiC The results show that reducing the system pressure and increasing the deposition temperature can reduce the maximum energy required for the nucleation of SiC in the gas phase and promote the nucleation.The thermodynamics of SiC deposition changes with the deposition conditions to determine the shape of SiC deposit Appearance changes.