本文用Ga-AsCl_3-H_2体系在改进的外延设备上生长了GaAs掺杂外延片.文中研究了GaAs气相掺杂过程并评价了外延层的质量.对掺杂外延时的表面形貌、生长速率、电子迁移率、击穿电压、横向浓度均匀性、纵向浓度分布、缺陷和外延重现性等参数进行了讨论.结果表明,所得外延片具有较好的质量,已用于制作微波器件,如变容管和开关管等. In this paper, GaAs-doped epitaxial wafers have been grown on a modified epitaxial device using the Ga-AsCl 3-H 2 system.The GaAs vapor-phase doping process has been studied and the quality of the epitaxial layer has been evaluated.The surface morphologies, The rate of electron mobility, breakdown voltage, lateral concentration uniformity, longitudinal concentration distribution, defects and epitaxial repeatability are discussed.The results show that the obtained epitaxial wafer has better quality and has been used to fabricate microwave devices, Such as the varactor and the switch.