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本文采用数值模拟方法,在考虑短沟效应、开态电流、关态电流和开路电压增益等因素的基础上,首次给出GCHT低压工作下(0.8V)的设计容区图,清晰地反映了各效应对参数要求的矛盾折中,为器件设计提供了理论依据,也为合理开发深亚微米工艺指明了方向.本文采用的数据处理方法同时可用于针对成熟工艺线的实际器件与电路设计
In this paper, based on the factors of short-ditch effect, on-state current, off-state current and open-circuit voltage gain, the design capacity plot of low voltage of GCHT (0.8V) The contradictory compromise between the requirements of each effect provides a theoretical basis for device design and points the way for the rational development of deep submicron process. The data processing method used in this paper can also be used for the actual device and circuit design for the mature process line