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设计了采用准分子激光技术实现聚偏氟乙烯(PVDF)表面导电层图形化的制备方案。根据刻蚀缺陷为导电层活性中心的结论,利用刻蚀线构造图形控制导电层的扩展路径,再在光学掩模的协助下对导电层扩展外形进行限制,实现了PVDF表面多种导电图形的制备。实验结果表明,刻蚀缺陷不仅起到活性中心的作用,同时对导电区域进行了有效分割;掩模起到了对激光辐照区域限制的作用,进而实现了对导电层生长区域外形的控制。采用扫描电镜沿导电层的扩展方向对不同位置的导电层的微观形貌进行观察,提出导电层的形成扩展机理。为PVDF基电子器件的开发提供可能,为各种类型导电高分子聚合物材料表面快速图形化制备提供技术指导和实验基础。
The preparation scheme of the conductive layer of polyvinylidene fluoride (PVDF) surface was designed by using excimer laser technology. According to the conclusion that the etching defect is the active center of the conductive layer, the extension path of the conductive layer is controlled by the etching line structure pattern, and the expansion shape of the conductive layer is limited with the help of the optical mask, preparation. The experimental results show that the etching defects not only play the role of active center, but also effectively partition the conductive area; the mask plays a role of limiting the laser irradiation area, and the control of the outline of the growth area of the conductive layer is achieved. Scanning electron microscopy was used to observe the microstructures of the conductive layers at different positions along the direction of the conductive layer. The mechanism of formation and propagation of the conductive layers was proposed. It provides the possibility for the development of PVDF-based electronic devices and provides technical guidance and experimental basis for rapid graphic preparation of various types of conductive polymer materials.