论文部分内容阅读
采用对靶磁控溅射方法在单晶Si(100)基片上制备了反钙钛矿结构的Mn_3CuN_x薄膜.通过控制制备过程中的反应气体氮气(N_2)流量(N_2/Ar+N_2),研究了氮含量对Mn_3CuN_x薄膜结构及物理性能的影响.分别利用X射线衍射仪、俄歇电子能谱、原子力显微镜、X射线光电子能谱、物理性能测试系统和超导量子干涉仪,对所制备薄膜的晶体结构、成分、表面形貌和电、磁输运性质进行了测试.结果表明:制备的薄膜均为反钙钛矿立方结构,且沿(200)晶面择优生长.随着氮含量的增大,薄膜表面粗糙度和颗粒度尺寸逐渐增大,导致电阻率增加.氮含量对薄膜的电输运性质没有影响,所有薄膜电阻率均随着温度的降低逐渐增大,呈现半导体型导电行为,这与对应的块体材料结果相反.Mn_3CuN_X薄膜随着测试温度的增大发生了亚铁磁到顺磁的磁转变,且N含量的增大降低了磁有序转变温度,主要是由于N缺陷对Mn6N八面体结构中磁交换作用的影响所致.
The anti-perovskite Mn_3CuN_x thin films were prepared on a single-crystal Si (100) substrate by target magnetron sputtering. By controlling the nitrogen (N_2) flux (N_2 / Ar + N_2) The effects of nitrogen content on the structure and physical properties of Mn_3CuN_x thin films were investigated by X-ray diffractometry, Auger electron spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, physical property test system and superconducting quantum interferometer, The crystal structure, composition, surface morphology and electrical and magnetic transport properties of the films were tested.The results show that the prepared films are all cubic perovskite structures and grow preferentially along the (200) plane.With the increase of nitrogen content Increases, the film surface roughness and particle size gradually increases, resulting in increased resistivity.Nitrogen content of the film has no effect on the electrical transport properties, all the film resistivity increases with decreasing temperature, showing semiconductor conductivity Which is opposite to that of the corresponding bulk materials.Mn_3CuN_X films have a ferromagnetic-paramagnetic magnetic transition with the increase of the test temperature, and the increase of the N content decreases the magnetic ordering transition temperature mainly due to N Trapping of Mn6N octahedral structure of the magnetic exchange interaction due.