随着集成电路特征线宽的不断减小,当前的光刻系统中光的衍射和干涉等问题严重地影响了掩模图形的曝光准确性,而要解决这种问题的关键是采用RET(精度增强技术,Resolution Enhanced Technology)。本文对现有的RET方法从系统的角度进行了总结。从一个光刻系统的图形出发,介绍了目前与之相关的RET方法并对RET的发展前景作了展望。 With the continuous decrease of the characteristic line width of integrated circuits, the problems of light diffraction and interference in the current lithography system seriously affect the exposure accuracy of the mask patterns. The key to solving this problem is to use RET Enhanced Technology. This article summarizes the existing RET methods from a system perspective. Starting from the graphic of a lithography system, the present RET methods are introduced and the prospect of RET is forecasted.