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去除触发器中的跨接和用二极管来选择单元,减小了静态MOS记忆单元的面积。这种单元具有互补晶体管、二极管和高额定值负载电阻,已用绝缘衬底上外延硅膜工艺(ESFI)实现;单元面积可以小到1500微米~2(2.4密耳~2),是到目前为止已知道的面积最小的静态MOS记忆单元。本文将讨论这种记忆单元的静态和动态特性,以及在大规模集成电路中的性能;为此目的,已在3.5×4.2毫米(140×170密耳)的面积上,做成了带有简单译码和读出电路的4096位的探索性存贮器。考虑所测量的数据,ESFI MOS存贮电路比动态MOS存贮器,在速度和功耗方面都显示出更好的性能,但其主要的优点是静态工作方式。
Removing the jumpers in the flip-flops and selecting the cells with diodes reduces the area of static MOS memory cells. This cell has complementary transistors, diodes, and high rated load resistance and has been implemented using an epitaxial silicon film process (ESFI) on an insulating substrate; the cell area can be as small as 1500-2 (2.4 mils to 2) The smallest known static MOS memory cell has so far been known. This article will discuss the static and dynamic characteristics of such a memory cell and its performance in large scale integrated circuits; for this purpose, an area of 3.5 x 4.2 mm (140 x 170 mils) has been made with a simple 4096-bit exploratory memory for decode and read circuits. Taking into account the measured data, the ESFI MOS memory circuit shows better performance in terms of speed and power consumption than the dynamic MOS memory, but its main advantage is the static mode of operation.