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1996年4月8—12日,在美国旧金山市举行了美国材料研究学会1996年春季会议。现将大会情况和其中铁电薄膜分会情况简介如下。1 材料科学的前沿会议共有50多个国家的2000多名科学家参加,设有30个分会,收到2600多篇论文,是近几年与会人数最多、分会数最多的一次会议。从分会可以看出目前材料科学的前沿领域。这30个分会是:(1)非晶硅技术—1996;(2)晶格失配半导体异质结构的缺陷与界面;(3)化合物半导体电子学与光子学;(4)稀土掺杂半导体Ⅱ;(5)用于电子器件的Ⅲ-氮族、SiC和金刚石材料;(6)Gesi和相关化合物;(7)绝缘体上的半导体—基础与技术;(8)平面显示材料Ⅱ;(9)用于先进技术的液晶材料;(10)光伏器件和相关器件应用的薄膜;(11)未来ULSI的先进金属化;(12)微电子学中的材料可靠性Ⅵ;(13)相关微电子器件的材料与处理技术;(14)快速热处
April 1996 8-12, San Francisco in the United States held a meeting of the American Society for Materials Research Spring 1996. Now the general situation and the situation of the ferroelectric thin film branch is as follows. 1 cutting-edge materials science conference A total of more than 50 countries, more than 2,000 scientists participated in, with 30 chapters, received more than 2,600 papers, is the largest number of participants in recent years, the highest number of sub-meetings. From the club can be seen at the forefront of materials science field. The 30 chapters are: (1) Amorphous silicon technology-1996; (2) defects and interfaces in lattice mismatched semiconductor heterostructures; (3) compound semiconductor electronics and photonics; (4) rare earth doped semiconductors (5) III-Nitrogen, SiC and diamond materials for electronic devices; (6) Gesi and related compounds; (7) semiconductors on insulator - foundations and technologies; ) Liquid Crystal Materials for Advanced Technologies; (10) Thin Film for Photovoltaic and Related Device Applications; (11) Advanced Metallization for Future ULSI; (12) Material Reliability in Microelectronics Ⅵ; (13) Related Microelectronics Device materials and processing technology; (14) rapid heat