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采用准静态Ｃ－Ｖ特性和高频Ｃ－Ｖ特性测试技术，结合温偏（Ｂ－Ｔ）实验，测试了等离子体增强化学汽相淀积（ＰＥＣＶＤ）法低温制备的富氮的ＳｉＯｘＮｙ栅介质膜的电学特性（界面态密度、固定电荷密度、介电常数、可动离子密度），结果表明，制备出的栅介质膜性质优良。
The quasi-static C-V characteristics and high-frequency C-V characteristic test techniques were used in combination with the temperature-biased (B-T) experiments to test the nitrogen-rich SiOxNy gate dielectric prepared by plasma enhanced chemical vapor deposition The electrical properties of the film (interface state density, fixed charge density, dielectric constant, movable ion density) show that the prepared gate dielectric film has excellent properties.