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以水热合成法制备的一维取向n型ZnO纳米线阵列为衬底,采用电化学沉积法在其上沉积生长一层p型Cu2O半导体包覆层,制备出了新型ZnO/Cu2O异质结纳米线阵列光敏器件.利用XRD、SEM、TEM、XPS、PL及光响应特性等测试方法对样品的形貌、晶体结构、化学成分及光电特性进行了分析表征.研究了生长条件对ZnO/Cu2O异质结纳米线阵列各种特性的影响.研究发现,适宜的沉积电压和沉积时间是保证ZnO/Cu2O异质结光敏器件具有适宜厚度核壳包覆层及较好光响应特性的关键因素.研究结果为ZnO及Cu2O半导体材料在光敏器件中的应用提供了实验基础.
A one-dimensional oriented n-type ZnO nanowire arrays prepared by hydrothermal synthesis method were used as substrates. A layer of p-type Cu2O semiconductor was deposited on the substrate by electrochemical deposition. A novel ZnO / Cu2O heterostructure The nanowire array photosensors were characterized by XRD, SEM, TEM, XPS, PL and photoresponse characteristics. The morphology, crystal structure, chemical composition and photoelectric properties of ZnO nanowire arrays were studied. Heterojunction nanowire array.The results show that proper deposition voltage and deposition time are the key factors to ensure proper thickness of the core-shell coating and good photoresponse of ZnO / Cu2O heterostructure photosensitive devices. The results provide the experimental basis for the application of ZnO and Cu2O semiconductor in photosensitive devices.