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采用0.18μm SiGe BiCMOS工艺,设计了一种符合多种协议要求的UHF RFID阅读器发射机.该电路包含电平移位电路(DCS)、I/Q正交上混频器、全集成功率放大器.通过DCS控制混频器跨导管的偏置,实现SSB-ASK、PR-ASK和DSB-ASK三种调制,并在不同基带信号强度下实现30％～100％可变调制深度的DSB-ASK调制.仿真结果表明,在转换增益为-4 dB时,上混频器的输出1 dB压缩点(OP1dB)为7.11 dBm,工作在AB类的功率放大器的OP1dB为26.64dBm,发射机输入DSB-ASK信号的trai为25μs.输出频谱满足三种协议要求.,An UHF RFID reader transmitter that met the requirements of various protocols was designed in a 0.18 μm SiGe BiCMOS process.It consisted of DC-voltage-shift (DCS) circuits,I/Q quadrature up-conversion mixers and fully integrated linear power amplifiers.The DCS circuit controlled the bias of transconductance transistors in the mixer to achieve SSB-ASK,PR-ASK and DSB-ASK modulation.The DSB-ASK modulation achieved 30％ to 100％ modulation depth with different baseband signal intensities.The simulation results showed that the OP1dB was 7.11 dBm when the proposed mixer’s conversion gain was-4 dB.The OPldB of Class-AB power amplifier was up to 26.64 dBm.The input DSB-ASK signal’s trai was 25 μs.The output spectrum of the transmitters met the requirements of the three protocols.