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Mo膜中的杂质氧明显减慢了Xe~+离子轰击诱生的MoSi_2的生长速率,氧的内扩散和再分布是由损伤分布支配的.小电流密度(<5×10~(-7)A/cm~2)Xe~+离子轰击引起的Mo/Si混合区,随轰击剂量增大而增大,但不生成钼硅化物相;衬底适当加温(>300℃)条件下,Xe~+离子轰击诱生的MoSi_2为六角结构.后退火温度大于850℃时,六角结构的MoSi_2转变为四角结构.选择适当的轰击剂量和衬底温度,利用离子束混合技术可以生长出不含氧杂质的均匀的Mosi_2层.
Impurity oxygen in Mo film slowed down the growth rate of MoSi_2 induced by Xe ~ + ion bombardment, and the inner diffusion and redistribution of oxygen were dominated by the damage distribution.A small current density (<5 × 10 -7) A / cm ~ 2). The Mo / Si mixed zone caused by Xe ~ + ion bombardment increases with the bombardment dose, but does not produce the molybdenum silicide phase. When the substrate is warm (> 300 ℃) ~ + Ion bombardment induced MoSi_2 hexagonal structure.When the post-annealing temperature is greater than 850 ℃, the hexagonal MoSi_2 into a four-corner structure.Select the appropriate bombardment dose and substrate temperature, the use of ion beam mixing technology can be grown without oxygen A homogeneous Mosi_2 layer of impurities.