利用反应堆对单晶硅进行中子辐照,实现单晶硅掺磷是七十年代发展起来的一项新的掺杂工艺,称为中子嬗变掺杂(简称NTD)。用NTD硅来制备核辐射探测器目前国内外都十分关注。高纯高阻硅单晶的发展相对说来比较缓慢,主要是在提纯和晶体生长工艺中遇到了很大的困难。目前用区熔法很难得到ρ高于30 kΩ·cm且均匀性较好的N型硅单 The neutron irradiation of single crystal silicon by a reactor to realize the doping of single crystal silicon is a new doping process developed in the seventies, called neutron transmutation doping (NTD). Nuclear radiation detector made of NTD silicon is very concerned at home and abroad. The development of high purity and high resistance silicon single crystals is relatively slow, mainly in the purification and crystal growth process encountered great difficulties. At present, it is very hard to obtain the N-type silicon single layer with ρ higher than 30 kΩ · cm and good uniformity