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Photoinduced resistance change(△R/R)in an oxygen-deficient La0.9Sr0.1MnO3-δthin film is studied.At room temperature，the resistance change of about 30% and response time of about 75 as are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW.It is also found that △R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition,which may have potential applications in optoelectronic devices