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本文对集成电路所用的横向晶体管做了二维分析和试验,对影响电流增益h_(FE)的“形状效应”进行了研究。实验结果和分析结果大体上显示了较好的一致性。通过分析和实验了解到,h_(FE)随发射极半径的减小而缓慢地增大;随基区宽度的减小而急剧地增大(这种增加比从一维分析中所予想的情况来得急剧);还随着外延层厚度的增加而增大。在出现最大值之后变小而趋于一定值等等。予料表面复合的影响与基区宽度和少数载流子扩散长度的平方的乘积成比例而占主导地位。
In this paper, two-dimensional analysis and experiment of horizontal transistors used in integrated circuits are done, and the “shape effect” that affects the current gain h FE is studied. The experimental results and the analysis generally show good agreement. Through analysis and experiment, we know that h FE increases slowly with the decrease of emitter radius and sharply increases with decrease of base width (this increase is more than that predicted from one-dimensional analysis Come sharp); also increases with the thickness of the epitaxial layer. After the maximum appears smaller and tends to a certain value and so on. The influence of the surface recombination on the material is dominated by the product of the base width and the square of the minority carrier diffusion length.