本文主要叙述采用高压液封原位合成直拉法生长半绝缘GaAs单晶的合成原理、工艺概述和实验结果。以该材料为衬底,经汽相外延试制的10千兆赫低噪声场效应管,得到了夹断电压3.5伏、增益7.4分贝、最低噪声系数1.4分贝的良好结果。最后对该方法的优缺点加以讨论。此方法是获得大直径、圆断面、高质量半绝缘GaAs单晶的好方法。 This article describes the synthesis principle, process overview and experimental results of semi-insulating GaAs single crystal grown by in situ synthesis of Czochralski method by high pressure liquid seal. Using this material as a substrate, a 10 gigahertz low noise FET fabricated by vapor phase epitaxy has been shown to provide good results with a pinch-off voltage of 3.5 V, a gain of 7.4 dB, and a minimum noise figure of 1.4 dB. Finally, the advantages and disadvantages of this method are discussed. This method is a good way to obtain large diameter, round section, high quality semi-insulating GaAs single crystals.