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A 700 V BCD technology platform is presented for high voltage applications.An important feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an epitaxial or a buried layer.An economical manufacturing process,requiring only 10 masking steps,yields a broad range of MOS and bipolar components integrated on a common substrate,including 700 V nLDMOS,200 V nLDMOS,80 V nLDMOS,60 V nLDMOS,40 V nLDMOS,700 V nJFET,and low voltage devices.A robust double RESURF nLDMOS with a breakdown voltage of 800 V and specific on-resistance of 206.2 mΩ·cm~2 is successfully optimized and realized.The results of this technology are low fabrication cost,simple process and small chip area for PIC products.
A 700 V BCD technology platform is presented for high voltage applications. An important feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an epitaxial or a buried layer. An economically manufacturing process, Requires only 10 masking steps, yields a broad range of MOS and bipolar components integrated on a common substrate, including 700 V nLDMOS, 200 V nLDMOS, 80 V nLDMOS, 60 V nLDMOS, 40 V nLDMOS, 700 V nJFET, and low voltage devices . A robust double RESURF nLDMOS with a breakdown voltage of 800 V and a specific on-resistance of 206.2 mΩ · cm ~ 2 is successfully optimized and realized. The results of this technology are low fabrication cost, simple process and small chip area for PIC products .