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中国科学院半导体照明研发中心简介自成立以来,在863重大项目和科学院创新工程的支持下,硬件平台建设基本完成,拥有从MOCVD外延、芯片开发到高效大功率封装较完整的工艺线.新购工艺设备33台套.具有正装、倒装和垂直结构的Si、GaN和Sapphire基的GaN LED芯片多种技术路线研发能力。以HVPE自支撑GaN衬底的研发为核心,支撑了第三代半导体材料和200lm/W发光效率的前沿技术探索。通过技术辐射和转移、人才培养、技术培训等支撑产业发展。通过国际合作实现了引进、消化、吸收再创新机制,促进产业发展,提高国际竞争能力、推动了我国半导体照明工程的实施。中心的总体目标:强化研发平台工程化能力、推进重大装备国产化进程、实现自主核心技术产业化应用。
Brief Introduction of Semiconductor Lighting R & D Center of Chinese Academy of Sciences Since its inception, with the support of 863 major projects and the innovation project of Academy of Sciences, the construction of hardware platform has basically been completed with a complete process line from MOCVD epitaxy and chip development to high-efficiency and high-power packaging. Equipped with 33 sets of equipment, R & D capabilities of GaN, Si, GaN and Sapphire-based GaN LED chips in a single package, flip chip package and vertical package. The HVPE self-supporting GaN substrate research and development as the core, supporting the third generation semiconductor materials and 200lm / W luminous efficiency of cutting-edge technology to explore. Through technological radiation and transfer, personnel training, technical training, etc. to support the development of the industry. Through international cooperation, it has realized the introduction, digestion, absorption and re-creation of mechanisms, promotion of industrial development and enhancement of international competitiveness, and promoted the implementation of China’s semiconductor lighting project. The overall goal of the center is to strengthen the engineering capabilities of R & D platforms, promote the localization of major equipment and realize the application of independent core technologies.