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掺氧多晶硅薄膜作为钝化膜已成功地应用于半导体器件.为了适应器件制造过程中的高温热处理,有必要探讨膜的高温热退火物理效应.本文从薄膜的腐蚀速率、膜的厚度以及膜的折射率随不同退火温度的变化,显示了掺氧多晶硅薄膜经高温退火的致密效应.而从膜的红外吸收谱测量表明膜中含氧量基本不变,但Si-O键吸收峰随着退火温度的升高向高频方向移动,并且愈益接近SiO_2的红外吸收谱.由此说明高温热退火使无定形的生长层薄膜再结构为Si多晶颗粒和SiO_2.使膜中SiO_2成份随着退火温度升高也跟着增加.
In order to adapt to the high-temperature heat treatment in the device manufacturing process, it is necessary to investigate the physical effect of high-temperature thermal annealing of the film.In this paper, from the film corrosion rate, the thickness of the film and the film The refractive index changes with the different annealing temperature, showing the dense effect of high temperature annealing of the oxygen-doped polycrystalline silicon film. The infrared absorption spectrum measurement of the film shows that the content of oxygen in the film is basically unchanged, but the absorption peak of Si-O bond changes with the annealing The temperature increases toward the high frequency direction, and more and more close to the infrared absorption spectrum of SiO_2, thus indicating that the high temperature thermal annealing of the amorphous growth layer film is re-structured into Si polycrystalline particles and SiO_2 film SiO_2 composition with annealing The temperature rise also increases.